Sign In | Join Free | My chinaqualitycrafts.com
China Sanhuang electronics (Hong Kong) Co., Limited logo
Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
Verified Supplier

3 Years

Home > Flash Memory IC >

CY7C1350G-133BGXC IC SRAM 4.5MBIT PAR 119PBGA Cypress Semiconductor Corp

Sanhuang electronics (Hong Kong) Co., Limited
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

CY7C1350G-133BGXC IC SRAM 4.5MBIT PAR 119PBGA Cypress Semiconductor Corp

Brand Name : Cypress Semiconductor Corp

Model Number : CY7C1350G-133BGXC

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Synchronous, SDR

Memory Size : 4.5Mbit

Memory Organization : 128K x 36

Memory Interface : Parallel

Clock Frequency : 133 MHz

Write Cycle Time - Word, Page : -

Access Time : 4 ns

Voltage - Supply : 3.135V ~ 3.6V

Operating Temperature : 0°C ~ 70°C (TA)

Mounting Type : Surface Mount

Package / Case : 119-BGA

Supplier Device Package : 119-PBGA (14x22)

Contact Now

Product Details

Functional Description

The CY7C1350G is a 3.3 V, 128 K × 36 synchronous-pipelined burst SRAM designed specifically to support unlimited true back-to-back read/write operations without the insertion of wait states. The CY7C1350G is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive read/write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of the SRAM, especially in systems that require frequent write/read transitions.

Features

■ Pin compatible and functionally equivalent to ZBT™ devices
■ Internally self-timed output buffer control to eliminate the need to use OE
■ Byte write capability
■ 128 K × 36 common I/O architecture
■ 3.3 V power supply (VDD)
■ 2.5 V / 3.3 V I/O power supply (VDDQ)
■ Fast clock-to-output times
❐ 2.8 ns (for 200-MHz device)
■ Clock enable (CEN) pin to suspend operation
■ Synchronous self-timed writes
■ Asynchronous output enable (OE)
■ Available in Pb-free 100-pin TQFP package, Pb-free and non Pb-free 119-ball BGA package
■ Burst capability – linear or interleaved burst order
■ “ZZ” sleep mode option

Specifications

Attribute Attribute Value
Manufacturer Cypress Semiconductor
Product Category Memory ICs
Series NoBL™
Packaging Tray
Package-Case 119-BGA
Operating-Temperature 0°C ~ 70°C (TA)
Interface Parallel
Voltage-Supply 3.135 V ~ 3.6 V
Supplier-Device-Package 119-PBGA (14x22)
Memory Capacity 4.5M (128K x 36)
Memory-Type SRAM - Synchronous
Speed 133MHz
Format-Memory RAM

Descriptions

SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Parallel 133MHz 4ns 119-PBGA (14x22)

Quality CY7C1350G-133BGXC IC SRAM 4.5MBIT PAR 119PBGA Cypress Semiconductor Corp for sale

CY7C1350G-133BGXC IC SRAM 4.5MBIT PAR 119PBGA Cypress Semiconductor Corp Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Sanhuang electronics (Hong Kong) Co., Limited
*Subject:
*Message:
Characters Remaining: (0/3000)